SIR410DP-T1-GE3 VISHAY
Артикул
SIR410DP-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 20V 35A PPAK SO-8, N-Channel 20 V 35A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8
Цена
195 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIR410DP-T1-GE3.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 10 V
FET Feature
-
Standard Package
3,000
Other Names
SIR410DP-T1-GE3DKR,SIR410DP-T1-GE3CT,SIR410DPT1GE3,SIR410DP-T1-GE3TR,SIR410DP-T1-GE3-ND
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Base Product Number
SIR410
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
4.2W (Ta), 36W (Tc)
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