SIR624DP-T1-GE3 VISHAY
Артикул
SIR624DP-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 200V 18.6A PPAK SO-8, N-Channel 200 V 18.6A (Tc) 52W (Tc) Surface Mount PowerPAK® SO-8
Цена
217 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIR624DP-T1-GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
18.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1110 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
52W (Tc)
Mounting Type
Surface Mount
Standard Package
3,000
Other Names
SIR624DP-T1-GE3TR,SIR624DP-T1-GE3DKR,SIR624DP-T1-GE3CT
Series
ThunderFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Base Product Number
SIR624
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 7.5 V
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