SIR882BDP-T1-RE3 VISHAY
Артикул
SIR882BDP-T1-RE3
Бренд
VISHAY
Описание
MOSFET N-CH 100V 16.5/67.5A PPAK, N-Channel 100 V 16.5A (Ta), 67.5A (Tc) 5W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8
Цена
289 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIR882BDP-T1-RE3.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
16.5A (Ta), 67.5A (Tc)
Rds On (Max) @ Id, Vgs
8.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 83.3W (Tc)
Drain to Source Voltage (Vdss)
100 V
Gate Charge (Qg) (Max) @ Vgs
81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3762 pF @ 50 V
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Standard Package
3,000
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Base Product Number
SIR882
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
742-SIR882BDP-T1-RE3DKR,742-SIR882BDP-T1-RE3CT,742-SIR882BDP-T1-RE3TR
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
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