SIS414DN-T1-GE3 VISHAY
Артикул
SIS414DN-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 30V 20A PPAK1212-8, N-Channel 30 V 20A (Tc) 3.4W (Ta), 31W (Tc) Surface Mount PowerPAK® 1212-8
Цена
95 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIS414DN-T1-GE3.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
16mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
795 pF @ 15 V
FET Feature
-
Standard Package
3,000
Other Names
SIS414DNT1GE3,SIS414DN-T1-GE3DKR,SIS414DN-T1-GE3CT,SIS414DN-T1-GE3TR
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Supplier Device Package
PowerPAK® 1212-8
Base Product Number
SIS414
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
3.4W (Ta), 31W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут