SIS892DN-T1-GE3 VISHAY
Артикул
SIS892DN-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 100V 30A PPAK1212-8, N-Channel 100 V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Цена
288 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIS892DN-T1-GE3.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
29mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
611 pF @ 50 V
FET Feature
-
Standard Package
3,000
Other Names
SIS892DNT1GE3,SIS892DN-T1-GE3CT,SIS892DN-T1-GE3TR,SIS892DN-T1-GE3DKR
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Supplier Device Package
PowerPAK® 1212-8
Base Product Number
SIS892
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
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