SISS10ADN-T1-GE3 VISHAY
Артикул
SISS10ADN-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 40V 31.7A/109A PPAK, N-Channel 40 V 31.7A (Ta), 109A (Tc) 4.8W (Ta), 56.8W (Tc) Surface Mount PowerPAK® 1212-8S
Цена
119 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SISS10ADN-T1-GE3.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
31.7A (Ta), 109A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
3030 pF @ 20 V
FET Feature
-
Standard Package
3,000
Other Names
SISS10ADN-T1-GE3TR,SISS10ADN-T1-GE3CT,SISS10ADN-T1-GE3DKR
HTSUS
8541.29.0095
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8S
Supplier Device Package
PowerPAK® 1212-8S
Base Product Number
SISS10
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
4.8W (Ta), 56.8W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут