SISS22LDN-T1-GE3 VISHAY
Артикул
SISS22LDN-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 60V 25.5A/92.5A PPAK, N-Channel 60 V 25.5A (Ta), 92.5A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S
Цена
217 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SISS22LDN-T1-GE3.jpg
Supplier Device Package
PowerPAK® 1212-8S
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
25.5A (Ta), 92.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2540 pF @ 30 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Package / Case
PowerPAK® 1212-8S
Operating Temperature
-55°C ~ 150°C (TJ)
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Base Product Number
SISS22
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
742-SISS22LDN-T1-GE3CT,742-SISS22LDN-T1-GE3TR,742-SISS22LDN-T1-GE3DKR
Standard Package
3,000
Mounting Type
Surface Mount
Power Dissipation (Max)
5W (Ta), 65.7W (Tc)
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