SISS71DN-T1-GE3 VISHAY
Артикул
SISS71DN-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 100V 23A PPAK1212-8S, P-Channel 100 V 23A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S
Цена
200 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SISS71DN-T1-GE3.jpg
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1050 pF @ 50 V
FET Feature
-
Standard Package
3,000
Other Names
SISS71DN-T1-GE3CT,SISS71DN-T1-GE3TR,SISS71DN-T1-GE3DKR
HTSUS
8541.29.0095
Series
ThunderFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8S
Supplier Device Package
PowerPAK® 1212-8S
Base Product Number
SISS71
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
57W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут