SIZ200DT-T1-GE3 VISHAY
Артикул
SIZ200DT-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH DUAL 30V, Mosfet Array 2 N-Channel (Dual) 30V 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) 4.3W (Ta), 33W (Tc) Surface Mount 8-PowerPair® (3.3x3.3)
Цена
186 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/SIZ200DT-T1-GE3.jpg
Other Names
SIZ200DT-T1-GE3CT,SIZ200DT-T1-GE3TR,SIZ200DT-T1-GE3DKR
Standard Package
3,000
FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs
5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
28nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1510pF @ 15V, 1600pF @ 15V
FET Feature
Standard
HTSUS
8541.29.0095
ECCN
EAR99
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Supplier Device Package
8-PowerPair® (3.3x3.3)
Base Product Number
SIZ200
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
4.3W (Ta), 33W (Tc)
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