SIZ328DT-T1-GE3 VISHAY
Артикул
SIZ328DT-T1-GE3
Бренд
VISHAY
Описание
MOSFET DUAL N-CHAN 25V POWERPAIR, Mosfet Array 2 N-Channel (Dual) 25V 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc) 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc) Surface Mount 8-Power33 (3x3)
Цена
68 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/SIZ328DT-T1-GE3.jpg
Other Names
SIZ328DT-T1-GE3DKR,SIZ328DT-T1-GE3TR,SIZ328DT-GE3,SIZ328DT-T1-GE3CT
Standard Package
3,000
FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs
15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.9nC @ 10V, 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
325pF @ 10V, 600pF @ 10V
FET Feature
Standard
HTSUS
8541.29.0095
ECCN
EAR99
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Supplier Device Package
8-Power33 (3x3)
Base Product Number
SIZ328
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
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