SIZ998BDT-T1-GE3 VISHAY
Артикул
SIZ998BDT-T1-GE3
Бренд
VISHAY
Описание
DUAL N-CHANNEL 30-V (D-S) MOSFET, Mosfet Array 2 N-Channel (Dual), Schottky 30V 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) Surface Mount 8-PowerPair® (6x5)
Цена
169 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Series
TrenchFET® Gen IV
Power - Max
3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
FET Type
2 N-Channel (Dual), Schottky
Current - Continuous Drain (Id) @ 25°C
23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Rds On (Max) @ Id, Vgs
4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
FET Feature
Standard
Drain to Source Voltage (Vdss)
30V
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V, 46.7nC @ 10V
Supplier Device Package
8-PowerPair® (6x5)
Package / Case
8-PowerWDFN
Standard Package
3,000
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Base Product Number
SIZ998
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
742-SIZ998BDT-T1-GE3TR,742-SIZ998BDT-T1-GE3DKR,742-SIZ998BDT-T1-GE3CT
Input Capacitance (Ciss) (Max) @ Vds
790pF @ 15V, 2130pF @ 15V
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