SIZF906DT-T1-GE3 VISHAY
Артикул
SIZF906DT-T1-GE3
Бренд
VISHAY
Описание
MOSFET 2 N-CH 30V 60A POWERPAIR, Mosfet Array 2 N-Channel (Half Bridge) 30V 60A (Tc) 38W (Tc), 83W (Tc) Surface Mount 8-PowerPair® (6x5)
Цена
301 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/SIZF906DT-T1-GE3.jpg
Other Names
SIZF906DT-T1-GE3CT,SIZF906DT-T1-GE3CT-ND,SIZF906DT-T1-GE3TR,742-SIZF906DT-T1-GE3TR,742-SIZF906DT-T1-GE3CT,SIZF906DT-T1-GE3TR-ND,742-SIZF906DT-T1-GE3DKR
Standard Package
3,000
FET Type
2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Rds On (Max) @ Id, Vgs
3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22nC @ 4.5V, 92nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 15V, 8200pF @ 15V
FET Feature
Standard
HTSUS
8541.29.0095
ECCN
EAR99
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TA)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Supplier Device Package
8-PowerPair® (6x5)
Base Product Number
SIZF906
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
38W (Tc), 83W (Tc)
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