SQ2348ES-T1_GE3 VISHAY
Артикул
SQ2348ES-T1_GE3
Бренд
VISHAY
Описание
MOSFET N-CH 30V 8A TO236, N-Channel 30 V 8A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
Цена
110 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SQ2348ES-T1_GE3.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
24mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
540 pF @ 15 V
FET Feature
-
Standard Package
3,000
Other Names
SQ2348ES-T1_GE3CT,SQ2348ES-T1_GE3-ND,SQ2348ES-T1-GE3,SQ2348ES-T1-GE3-ND,SQ2348ES-T1_GE3DKR,SQ2348ES-T1_GE3TR
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Base Product Number
SQ2348
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
3W (Tc)
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