SQ3419EEV-T1-GE3 VISHAY
Артикул
SQ3419EEV-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 40V 7.4A 6TSOP, P-Channel 40 V 7.4A (Tc) 5W (Tc) Surface Mount 6-TSOP
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SQ3419EEV-T1-GE3.jpg
Standard Package
3,000
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
50mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1065 pF @ 20 V
FET Feature
-
Other Names
SQ3419EEV-T1-GE3CT,SQ3419EEV-T1-GE3DKR,SQ3419EEV-T1-GE3TR,SQ3419EEVT1GE3
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Base Product Number
SQ3419
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Power Dissipation (Max)
5W (Tc)
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