SQD10950E_GE3 VISHAY
Артикул
SQD10950E_GE3
Бренд
VISHAY
Описание
MOSFET N-CH 250V 11.5A TO252AA, N-Channel 250 V 11.5A (Tc) 62W (Tc) Surface Mount TO-252AA
Цена
238 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SQD10950E_GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
162mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
785 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
62W (Tc)
Mounting Type
Surface Mount
Standard Package
2,000
Other Names
SQD10950E_GE3-ND,742-SQD10950E_GE3DKR,742-SQD10950E_GE3CT,742-SQD10950E_GE3TR
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252AA
Base Product Number
SQD10950
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
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