SQD19P06-60L_GE3 VISHAY
Артикул
SQD19P06-60L_GE3
Бренд
VISHAY
Описание
MOSFET P-CH 60V 20A TO252, P-Channel 60 V 20A (Tc) 46W (Tc) Surface Mount TO-252AA
Цена
262 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SQD19P06-60L_GE3.jpg
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
55mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1490 pF @ 25 V
FET Feature
-
Standard Package
2,000
Other Names
SQD19P06-60L_GE3-ND,SQD19P06-60L-GE3-ND,SQD19P06-60L-GE3,SQD19P06-60L_GE3TR,SQD19P06-60L_GE3DKR,SQD19P06-60L_GE3CT
HTSUS
8541.29.0095
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252AA
Base Product Number
SQD19
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
46W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут