SQD50P08-25L_GE3 VISHAY
Артикул
SQD50P08-25L_GE3
Бренд
VISHAY
Описание
MOSFET P-CH 80V 50A TO252AA, P-Channel 80 V 50A (Tc) 136W (Tc) Surface Mount TO-252AA
Цена
453 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SQD50P08-25L_GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
25mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
136W (Tc)
Mounting Type
Surface Mount
Standard Package
2,000
Other Names
SQD50P08-25L_GE3CT,SQD50P08-25L_GE3DKR,SQD50P08-25L_GE3TR
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252AA
Base Product Number
SQD50
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
137 nC @ 10 V
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