SQJ431EP-T1_GE3 VISHAY
Артикул
SQJ431EP-T1_GE3
Бренд
VISHAY
Описание
MOSFET P-CH 200V 12A PPAK SO-8, P-Channel 200 V 12A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
Цена
324 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SQJ431EP-T1_GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
213mOhm @ 1A, 4V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4355 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Mounting Type
Surface Mount
Standard Package
3,000
Other Names
SQJ431EP-T1_GE3CT,SQJ431EP-T1_GE3TR,SQJ431EP-T1_GE3DKR
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Base Product Number
SQJ431
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V
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