SQJ570EP-T1_GE3 VISHAY
Артикул
SQJ570EP-T1_GE3
Бренд
VISHAY
Описание
MOSFET N/P-CH 100V POWERPAK SO8, Mosfet Array N and P-Channel 100V 15A (Tc), 9.5A (Tc) 27W Surface Mount PowerPAK® SO-8 Dual
Цена
198 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/SQJ570EP-T1_GE3.jpg
Standard Package
3,000
Mounting Type
Surface Mount
Power - Max
27W
FET Type
N and P-Channel
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
15A (Tc), 9.5A (Tc)
Rds On (Max) @ Id, Vgs
45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
650pF @ 25V, 600pF @ 25V
FET Feature
Standard
Other Names
SQJ570EP-T1_GE3CT,SQJ570EP-T1_GE3TR,SQJ570EP-T1_GE3DKR
HTSUS
8541.29.0095
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
PowerPAK® SO-8 Dual
Supplier Device Package
PowerPAK® SO-8 Dual
Base Product Number
SQJ570
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V, 15nC @ 10V
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