SQM120P06-07L_GE3 VISHAY
Артикул
SQM120P06-07L_GE3
Бренд
VISHAY
Описание
MOSFET P-CH 60V 120A TO263, P-Channel 60 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D?Pak)
Цена
596 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SQM120P06-07L_GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
14280 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Mounting Type
Surface Mount
Standard Package
800
Other Names
SQM120P06-07L_GE3CT,SQM120P06-07L_GE3DKR,SQM120P06-07L-GE3-ND,SQM120P06-07L_GE3TR,SQM120P06-07L-GE3,SQM120P06-07L_GE3-ND
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263 (D?Pak)
Base Product Number
SQM120
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
270 nC @ 10 V
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