SQM120P10_10M1LGE3 VISHAY
Артикул
SQM120P10_10M1LGE3
Бренд
VISHAY
Описание
MOSFET P-CH 100V 120A TO263, P-Channel 100 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D?Pak)
Цена
630 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SQM120P10_10M1LGE3.jpg
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
190 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9000 pF @ 25 V
FET Feature
-
Standard Package
800
Other Names
SQM120P10_10M1LGE3-ND,SQM120P10 10M1LGE3,SQM120P10_10M1LGE3TR,SQM120P10_10M1LGE3CT,SQM120P10_10M1LGE3DKR
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263 (D?Pak)
Base Product Number
SQM120
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Power Dissipation (Max)
375W (Tc)
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