SQS415ENW-T1_GE3 VISHAY
Артикул
SQS415ENW-T1_GE3
Бренд
VISHAY
Описание
MOSFET P-CH 40V 16A PPAK1212-8W, P-Channel 40 V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8W
Цена
176 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SQS415ENW-T1_GE3.jpg
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
16.1mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
82 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4825 pF @ 25 V
FET Feature
-
Standard Package
3,000
Other Names
SQS415ENW-T1_GE3TR,SQS415ENW-T1_GE3CT,SQS415ENW-T1_GE3DKR
HTSUS
8541.29.0095
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8W
Supplier Device Package
PowerPAK® 1212-8W
Base Product Number
SQS415
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
62.5W (Tc)
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