SUD09P10-195-GE3 VISHAY
Артикул
SUD09P10-195-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 100V 8.8A TO252, P-Channel 100 V 8.8A (Tc) 2.5W (Ta), 32.1W (Tc) Surface Mount TO-252AA
Цена
157 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SUD09P10-195-GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
195mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1055 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 32.1W (Tc)
Mounting Type
Surface Mount
Standard Package
2,000
Other Names
SUD09P10-195-GE3CT,SUD09P10-195-GE3TR,SUD09P10195GE3,SUD09P10-195-GE3DKR
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252AA
Base Product Number
SUD09
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
34.8 nC @ 10 V
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