SUP70101EL-GE3 VISHAY
Артикул
SUP70101EL-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 100V 120A TO220AB, P-Channel 100 V 120A (Tc) 375W (Tc) Through Hole TO-220AB
Цена
536 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SUP70101EL-GE3.jpg
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Standard Package
1
Other Names
SUP70101EL-GE3CT,SUP70101EL-GE3DKRINACTIVE,SUP70101EL-GE3TR-ND,SUP70101EL-GE3TR,SUP70101EL-GE3CT-ND,SUP70101EL-GE3DKR,SUP70101EL-GE3TRINACTIVE,SUP70101EL-GE3DKR-ND
Series
TrenchFET®
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Base Product Number
SUP70101
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
190 nC @ 10 V
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