DMN62D0LFB-7 Diodes Incorporated
Артикул
DMN62D0LFB-7
Бренд
Diodes Incorporated
Описание
MOSFET N-CH 60V 100MA 3DFN, N-Channel 60 V 100mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3
Цена
81 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/DMN62D0LFB-7.jpg
Supplier Device Package
X1-DFN1006-3
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)
Rds On (Max) @ Id, Vgs
2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
32 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4V
Vgs (Max)
±20V
Package / Case
3-UFDFN
Operating Temperature
-55°C ~ 150°C (TJ)
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Base Product Number
DMN62
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
DMN62D0LFB-7DICT,DMN62D0LFB-7DITR,DMN62D0LFB-7DI-ND,DMN62D0LFB-7DI,DMN62D0LFB-7DIDKR
Standard Package
3,000
Mounting Type
Surface Mount
Power Dissipation (Max)
470mW (Ta)
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