EPC2012C EPC
Артикул
EPC2012C
Бренд
EPC
Описание
GANFET N-CH 200V 5A DIE OUTLINE, N-Channel 200 V 5A (Ta) - Surface Mount Die Outline (4-Solder Bar)
Цена
475 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/EPC2012C.jpg
Supplier Device Package
Die Outline (4-Solder Bar)
Technology
GaNFET (Gallium Nitride)
Power Dissipation (Max)
-
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Rds On (Max) @ Id, Vgs
100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)
5V
Package / Case
Die
REACH Status
REACH Unaffected
Series
eGaN®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0040
Other Names
917-1084-1,917-1084-2,917-1084-6
Standard Package
2,500
Base Product Number
EPC2012
Vgs (Max)
+6V, -4V
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