KSD2012GTU Fairchild Semiconductor
Артикул
KSD2012GTU
Бренд
Fairchild Semiconductor
Описание
KSD2012 - NPN EPITAXIAL SILICON, Bipolar (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Through Hole TO-220F-3
Цена
71 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/KSD2012GTU.jpg
Supplier Device Package
TO-220F-3
Power - Max
25 W
Voltage - Collector Emitter Breakdown (Max)
60 V
Current - Collector (Ic) (Max)
3 A
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 2A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 500mA, 5V
Package / Case
TO-220-3 Full Pack
Mounting Type
Through Hole
Series
-
Package
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
Vendor Undefined
REACH Status
REACH Affected
Other Names
2156-KSD2012GTU-600039
Standard Package
1
Operating Temperature
150°C (TJ)
Frequency - Transition
3MHz
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