2301H Goford Semiconductor
Артикул
2301H
Бренд
Goford Semiconductor
Описание
P30V,RD(MAX)<130M@-4.5V,RD(MAX)<, P-Channel 30 V 2A (Ta) 1W (Ta) Surface Mount SOT-23-3
Цена
14 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/2301H.jpg
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
125mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 2.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
405 pF @ 10 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)
Part Status
Active
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
Other Names
3141-2301HCT,3141-2301HTR
Standard Package
3,000
HTSUS
8541.29.0095
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
1W (Ta)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут