IRF520 Harris
Артикул
IRF520
Бренд
Harris
Описание
MOSFET N-CH 100V 9.2A TO220AB, N-Channel 100 V 9.2A (Tc) 60W (Tc) Through Hole TO-220AB
Цена
57 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF520.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
9.2A (Tc)
Rds On (Max) @ Id, Vgs
270mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Drain to Source Voltage (Vdss)
100 V
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
REACH Status
Vendor Undefined
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Series
-
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Other Names
2156-IRF520,HARHARIRF520
Standard Package
1
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
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