IRF614 Harris
Артикул
IRF614
Бренд
Harris
Описание
ADVANCED POWER MOSFET, N-Channel 250 V 2.7A (Tc) 36W (Tc) Through Hole TO-220AB
Цена
71 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF614.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
2.7A (Tc)
Rds On (Max) @ Id, Vgs
2Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
36W (Tc)
Drain to Source Voltage (Vdss)
250 V
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
REACH Status
Vendor Undefined
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Series
-
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Base Product Number
IRF614
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Other Names
HARHARIRF614,2156-IRF614
Standard Package
1
Drive Voltage (Max Rds On, Min Rds On)
10V
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