IRF610 Harris
Артикул
IRF610
Бренд
Harris
Описание
3.3A 200V 1.500 OHM N-CHANNEL, N-Channel 200 V 3.3A (Tc) 36W (Tc) Through Hole TO-220AB
Цена
31 руб.
Теги
Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные, Harris Corporation IRF610, #Н/Д
Series
Bulk
Technology
3.3A (Tc)
Current - Continuous Drain (Id) @ 25°C
1.5Ohm @ 2A, 10V
Rds On (Max) @ Id, Vgs
4V @ 250µA
Vgs(th) (Max) @ Id
±20V
Vgs (Max)
-
FET Feature
36W (Tc)
Dimming
200 V
Drain to Source Voltage (Vdss)
8.2 nC @ 10 V
Gate Charge (Qg) (Max) @ Vgs
140 pF @ 25 V
FET Type
MOSFET (Metal Oxide)
Mating Cycles
N-Channel
Package
Active
Efficiency
-55°C ~ 150°C (TJ)
Features
Through Hole
Standard Number
IRF610
RoHS Status
1 (Unlimited)
Moisture Sensitivity Level (MSL)
EAR99
HTSUS
HARHARIRF610,2156-IRF610
Architecture
TO-220-3
Package / Case
TO-220AB
Frames per Second
10V
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