IRF710 Harris
Артикул
IRF710
Бренд
Harris
Описание
PFET, 2A I(D), 400V, 3.6OHM, 1-E, N-Channel 400 V 2A (Tc) 36W (Tc) Through Hole TO-220AB
Цена
64 руб.
Теги
Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные, Harris Corporation IRF710, #Н/Д
Image
files/IRF710.jpg
Technology
2A (Tc)
Current - Continuous Drain (Id) @ 25°C
3.6Ohm @ 1.1A, 10V
Rds On (Max) @ Id, Vgs
4V @ 250µA
Vgs(th) (Max) @ Id
±20V
Vgs (Max)
-
FET Feature
36W (Tc)
Dimming
400 V
Drain to Source Voltage (Vdss)
12 nC @ 10 V
Gate Charge (Qg) (Max) @ Vgs
135 pF @ 25 V
FET Type
MOSFET (Metal Oxide)
Mating Cycles
N-Channel
Package / Case
TO-220AB
Series
Bulk
Package
Active
Efficiency
-55°C ~ 150°C (TJ)
Features
Through Hole
Standard Number
IRF710
RoHS Status
1 (Unlimited)
Moisture Sensitivity Level (MSL)
EAR99
HTSUS
2156-IRF710,HARHARIRF710
Architecture
TO-220-3
Frames per Second
10V
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