IRF830 Harris
Артикул
IRF830
Бренд
Harris
Описание
MOSFET N-CH 500V 4.5A TO220-3, N-Channel 500 V 4.5A (Tc) 75W (Tc) Through Hole TO-220AB
Цена
231 руб.
Теги
Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные, Harris Corporation IRF830, #Н/Д
Series
Bulk
Technology
4.5A (Tc)
Current - Continuous Drain (Id) @ 25°C
1.5Ohm @ 2.5A, 10V
Rds On (Max) @ Id, Vgs
4V @ 250µA
Vgs(th) (Max) @ Id
±20V
Vgs (Max)
-
FET Feature
75W (Tc)
Dimming
500 V
Drain to Source Voltage (Vdss)
32 nC @ 10 V
FET Type
MOSFET (Metal Oxide)
Mating Cycles
N-Channel
Package
Active
Efficiency
-55°C ~ 150°C (TJ)
Features
Through Hole
RoHS Status
1 (Unlimited)
Moisture Sensitivity Level (MSL)
EAR99
HTSUS
HARHARIRF830,2156-IRF830
Architecture
TO-220-3
Package / Case
TO-220AB
Gate Charge (Qg) (Max) @ Vgs
600 pF @ 25 V
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