BSM75GB120DN2HOSA1 Infineon Technologies
Артикул
BSM75GB120DN2HOSA1
Бренд
Infineon Technologies
Описание
IGBT MOD 1200V 105A 625W, IGBT Module - Half Bridge 1200 V 105 A 625 W Chassis Mount Module
Цена
20 424 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Modules, Транзисторы - IGBT - Модули
Series
-
Other Names
BSM75GB120DN2,SP000095923
Configuration
Half Bridge
Power - Max
625 W
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
105 A
Input
Standard
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 75A
NTC Thermistor
No
Current - Collector Cutoff (Max)
1.5 mA
Base Product Number
BSM75GB120
Mounting Type
Chassis Mount
Standard Package
10
Package
Tray
Part Status
Last Time Buy
Operating Temperature
150°C (TJ)
Package / Case
Module
Supplier Device Package
Module
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Input Capacitance (Cies) @ Vce
5.5 nF @ 25 V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут