BCR112E6327HTSA1 Infineon Technologies
Артикул
BCR112E6327HTSA1
Бренд
Infineon Technologies
Описание
TRANS PREBIAS NPN 0.2W SOT23-3, Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 140 MHz 200 mW Surface Mount PG-SOT23
Цена
41 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Pre-Biased, Транзисторы - биполярные (BJT) - одиночные, с предварительной изоляцией
Image
files/BCR112E6327HTSA1.jpg
Other Names
BCR 112 E6327CT,BCR 112 E6327CT-ND,BCR112E6327XT,BCR 112 E6327DKR,BCR 112 E6327DKR-ND,BCR112E6327HTSA1DKR,BCR 112 E6327,BCR 112 E6327TR-ND,BCR112E6327BTSA1,BCR112E6327HTSA1TR,BCR112E6327HTSA1CT,BCR 112 E6327-ND,BCR112E6327,SP000010747
Power - Max
200 mW
Voltage - Collector Emitter Breakdown (Max)
50 V
Current - Collector (Ic) (Max)
100 mA
Transistor Type
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5mA, 5V
Frequency - Transition
140 MHz
Resistor - Base (R1)
4.7 kOhms
Base Product Number
BCR112
Mounting Type
Surface Mount
Standard Package
3,000
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Not For New Designs
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
PG-SOT23
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Resistor - Emitter Base (R2)
4.7 kOhms
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