BSC015NE2LS5IATMA1 Infineon Technologies
Артикул
BSC015NE2LS5IATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 25V 33A/100A TDSON, N-Channel 25 V 33A (Ta), 100A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-6
Цена
329 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSC015NE2LS5IATMA1.jpg
Other Names
BSC015NE2LS5IATMA1-ND,SP001288138,448-BSC015NE2LS5IATMA1DKR,448-BSC015NE2LS5IATMA1TR,448-BSC015NE2LS5IATMA1CT
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs
1.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 12 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
BSC015
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8-6
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Vgs (Max)
±16V
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