IPP139N08N3G Infineon Technologies
Артикул
IPP139N08N3G
Бренд
Infineon Technologies
Описание
N-CHANNEL POWER MOSFET, N-Channel 80 V 45A (Tc) 79W (Tc) Through Hole PG-TO220-3
Цена
96 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPP139N08N3G.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
13.9mOhm @ 45A, 10V
Vgs(th) (Max) @ Id
3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1730 pF @ 40 V
FET Feature
-
Supplier Device Package
PG-TO220-3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
Series
OptiMOS™
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
INFINFIPP139N08N3G,2156-IPP139N08N3G
Standard Package
1
Power Dissipation (Max)
79W (Tc)
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