BSC027N03S G Infineon Technologies
Артикул
BSC027N03S G
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 25A/100A TDSON, N-Channel 30 V 25A (Ta), 100A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount PG-TDSON-8-1
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSC027N03S-G.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs
2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
6540 pF @ 15 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
BSC027N03S G-ND,BSC027N03SG,BSC027N03SGXT,SP000095462
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8-1
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Vgs (Max)
±20V
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