BSC0901NSATMA1 Infineon Technologies
Артикул
BSC0901NSATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 28A/100A TDSON, N-Channel 30 V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-5
Цена
226 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSC0901NSATMA1.jpg
Other Names
BSC0901NSCT-ND,BSC0901NSATMA1DKR,BSC0901NSTR,BSC0901NSATMA1CT,BSC0901NSDKR-ND,BSC0901NSDKR,BSC0901NSCT,BSC0901NS,BSC0901NSATMA1TR,BSC0901NSTR-ND,SP000800248
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta), 69W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs
1.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2800 pF @ 15 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
BSC0901
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8-5
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Vgs (Max)
±20V
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