BSC12DN20NS3GATMA1 Infineon Technologies
Артикул
BSC12DN20NS3GATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 11.3A 8TDSON, N-Channel 200 V 11.3A (Tc) 50W (Tc) Surface Mount PG-TDSON-8-5
Цена
267 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSC12DN20NS3GATMA1.jpg
Other Names
BSC12DN20NS3GCT,BSC12DN20NS3GTR-ND,BSC12DN20NS3GATMA1CT,BSC12DN20NS3GATMA1TR,BSC12DN20NS3GTR,BSC12DN20NS3GDKR,BSC12DN20NS3GDKR-ND,BSC12DN20NS3 G,BSC12DN20NS3GATMA1DKR,BSC12DN20NS3G,BSC12DN20NS3GCT-ND,SP000781774
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
50W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
11.3A (Tc)
Rds On (Max) @ Id, Vgs
125mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id
4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 100 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
BSC12DN20
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8-5
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Vgs (Max)
±20V
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