BSC190N12NS3GATMA1 Infineon Technologies
Артикул
BSC190N12NS3GATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 120V 8.6A/44A TDSON, N-Channel 120 V 8.6A (Ta), 44A (Tc) 69W (Tc) Surface Mount PG-TDSON-8-1
Цена
336 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSC190N12NS3GATMA1.jpg
Other Names
BSC190N12NS3 GCT-ND,BSC190N12NS3 GCT,BSC190N12NS3 GDKR-ND,BSC190N12NS3 GTR-ND,BSC190N12NS3GATMA1TR,SP000652752,BSC190N12NS3 G,BSC190N12NS3 GTR,BSC190N12NS3GATMA1DKR-NDTR-ND,BSC190N12NS3GATMA1DKR,BSC190N12NS3G,BSC190N12NS3GATMA1CT,BSC190N12NS3 GDKR,BSC190N
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
69W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
8.6A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs
19mOhm @ 39A, 10V
Vgs(th) (Max) @ Id
4V @ 42µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2300 pF @ 60 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
BSC190
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8-1
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Vgs (Max)
±20V
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