BSP149H6327XTSA1 Infineon Technologies
Артикул
BSP149H6327XTSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 660MA SOT223-4, N-Channel 200 V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Цена
246 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSP149H6327XTSA1.jpg
Other Names
SP001058818,BSP149H6327XTSA1CT,BSP149H6327XTSA1DKR,BSP149H6327XTSA1TR
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.8W (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
660mA (Ta)
Rds On (Max) @ Id, Vgs
1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id
1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
430 pF @ 25 V
FET Feature
Depletion Mode
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V
Base Product Number
BSP149
Mounting Type
Surface Mount
Series
SIPMOS®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223-4
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Vgs (Max)
±20V
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