BSS225H6327FTSA1 Infineon Technologies
Артикул
BSS225H6327FTSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 600V 90MA SOT89, N-Channel 600 V 90mA (Ta) 1W (Ta) Surface Mount PG-SOT89
Цена
131 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSS225H6327FTSA1.jpg
Other Names
SP001047644,BSS225H6327FTSA1DKR,BSS225H6327FTSA1TR,BSS225H6327FTSA1CT
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1W (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
90mA (Ta)
Rds On (Max) @ Id, Vgs
45Ohm @ 90mA, 10V
Vgs(th) (Max) @ Id
2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs
5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
131 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
BSS225
Mounting Type
Surface Mount
Series
SIPMOS®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-243AA
Supplier Device Package
PG-SOT89
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Vgs (Max)
±20V
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