BSS670S2L Infineon Technologies
Артикул
BSS670S2L
Бренд
Infineon Technologies
Описание
MOSFET N-CH 55V 540MA SOT23-3, N-Channel 55 V 540mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
Цена
78 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSS670S2L.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
360mW (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
540mA (Ta)
Rds On (Max) @ Id, Vgs
650mOhm @ 270mA, 10V
Vgs(th) (Max) @ Id
2V @ 2.7µA
Gate Charge (Qg) (Max) @ Vgs
2.26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
75 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
BSS670S2LINTR-NDR,BSS670S2LXT,SP000013197,BSS670S2LXTINCT,BSS670S2LXTINTR,BSS670S2LINCT-NDR,BSS670S2LINTR,BSS670S2LXTINCT-ND,BSS670S2LXTINTR-ND,BSS670S2LINCT
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
PG-SOT23
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
3,000
Vgs (Max)
±20V
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