BSS806NEH6327XTSA1 Infineon Technologies
Артикул
BSS806NEH6327XTSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 20V 2.3A SOT23-3, N-Channel 20 V 2.3A (Ta) 500mW (Ta) Surface Mount PG-SOT23
Цена
78 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSS806NEH6327XTSA1.jpg
Other Names
BSS806NEH6327XTSA1CT,SP000999336,BSS806NEH6327XTSA1DKR,BSS806NEH6327XTSA1-ND,BSS806NEH6327XTSA1TR
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
500mW (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta)
Rds On (Max) @ Id, Vgs
57mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id
0.75V @ 11µA
Gate Charge (Qg) (Max) @ Vgs
1.7 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds
529 pF @ 10 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 2.5V
Base Product Number
BSS806
Mounting Type
Surface Mount
Series
Automotive, AEC-Q101, HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
PG-SOT23
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
3,000
Vgs (Max)
±8V
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