BSZ16DN25NS3GATMA1 Infineon Technologies
Артикул
BSZ16DN25NS3GATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 250V 10.9A 8TSDSON, N-Channel 250 V 10.9A (Tc) 62.5W (Tc) Surface Mount PG-TSDSON-8
Цена
379 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSZ16DN25NS3GATMA1.jpg
Other Names
BSZ16DN25NS3GATMA1DKR,BSZ16DN25NS3GDKR-ND,BSZ16DN25NS3GTR-ND,SP000781800,BSZ16DN25NS3GCT,BSZ16DN25NS3G,BSZ16DN25NS3GATMA1CT,BSZ16DN25NS3GATMA1TR,BSZ16DN25NS3GCT-ND,BSZ16DN25NS3 G,BSZ16DN25NS3GTR,BSZ16DN25NS3GDKR
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
62.5W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
10.9A (Tc)
Rds On (Max) @ Id, Vgs
165mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 32µA
Gate Charge (Qg) (Max) @ Vgs
11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 100 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
BSZ16DN25
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TSDSON-8
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Vgs (Max)
±20V
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