BUP213 Infineon Technologies
Артикул
BUP213
Бренд
Infineon Technologies
Описание
IGBT 1200V 32A 200W TO220, IGBT - 1200 V 32 A 200 W Through Hole TO-220AB
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/BUP213.jpg
Other Names
BUP213IN
Test Condition
600V, 15A, 82Ohm, 15V
Power - Max
200 W
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
32 A
IGBT Type
-
Current - Collector Pulsed (Icm)
64 A
Vce(on) (Max) @ Vge, Ic
3.2V @ 15V, 15A
Switching Energy
-
Mounting Type
Through Hole
Standard Package
50
HTSUS
8541.29.0095
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Td (on/off) @ 25°C
70ns/400ns
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