BUZ80A Infineon Technologies
Артикул
BUZ80A
Бренд
Infineon Technologies
Описание
MOSFET N-CH 800V 3.6A TO220AB, N-Channel 800 V 3.6A (Tc) 100W (Tc) Through Hole TO-220AB
Цена
289 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BUZ80A.jpg
Other Names
BUZ80AIN
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
100W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3.6A (Tc)
Rds On (Max) @ Id, Vgs
3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Standard Package
500
Series
SIPMOS®
Package
Tube
Part Status
Discontinued at Digi-Key
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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