IAUC100N08S5N043ATMA1 Infineon Technologies
Артикул
IAUC100N08S5N043ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 80V 100A 8TDSON-34, N-Channel 80 V 100A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-34
Цена
450 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IAUC100N08S5N043ATMA1.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.8V @ 63µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3860 pF @ 40 V
FET Feature
-
Supplier Device Package
PG-TDSON-8-34
Package / Case
8-PowerTDFN
Mounting Type
Surface Mount
Series
Automotive, AEC-Q101, OptiMOS™-5
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Other Names
SP001780758,448-IAUC100N08S5N043ATMA1CT,448-IAUC100N08S5N043ATMA1DKR,448-IAUC100N08S5N043ATMA1TR
Standard Package
5,000
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Base Product Number
IAUC100
RoHS Status
ROHS3 Compliant
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
125W (Tc)
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