IGLD60R070D1AUMA1 Infineon Technologies
Артикул
IGLD60R070D1AUMA1
Бренд
Infineon Technologies
Описание
GANFET N-CH 600V 15A LSON-8, N-Channel 600 V 15A (Tc) 114W (Tc) Surface Mount PG-LSON-8-1
Цена
479 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IGLD60R070D1AUMA1.jpg
Other Names
SP001705420,IGLD60R070D1AUMA1DKR,IGLD60R070D1AUMA1TR,IGLD60R070D1AUMA1CT
Technology
GaNFET (Gallium Nitride)
Power Dissipation (Max)
114W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.6V @ 2.6mA
Input Capacitance (Ciss) (Max) @ Vds
380 pF @ 400 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
-
Base Product Number
IGLD60
Mounting Type
Surface Mount
Standard Package
3,000
Series
CoolGaN™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-LDFN Exposed Pad
Supplier Device Package
PG-LSON-8-1
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
-10V
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